PART |
Description |
Maker |
ML9XX22 ML9SM11 ML9SM11-02 ML9SM11-03 ML9SM22 ML9S |
2.5Gbps DWDM InGaAsP DFB-LASER DIODE 高达2.5Gbps的DWDM激光器InGaAsP的激光二极管 1557 nm, LASER DIODE 1555 nm, LASER DIODE
|
Mitsubishi Electric Semicon... Mitsubishi Electric, Corp. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
AS081C480W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik GmbH
|
AS081Q15000W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik GmbH
|
AS098C100W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik GmbH
|
ZHMA2901 ZHMA2911 |
Diode Array Diode Array; Case Size: 19x9 mm; Packaging: Bulk 0.1 A, 40 V, 6 ELEMENT, SILICON, SIGNAL DIODE Diode Array Diode Array 0.1 A, 40 V, 8 ELEMENT, SILICON, SIGNAL DIODE
|
Bourns, Inc. Nichicon, Corp.
|
SPLLG81-P |
Passiv gekuhlter SIRILAS Diodenlaser 15 W cw bei 808nm Conductively cooled SIRILAS? Laser Diode Array 15 W cw at 808nm Passiv gekuhlter SIRILAS Diodenlaser 15 W cw bei 808nm Conductively cooled SIRILAS㈢ Laser Diode Array 15 W cw at 808nm
|
OSRAM GmbH
|
NX7363JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
NX7537BF-AA |
LASER DIODE 1 550 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
SLD324ZT-21 SLD324ZT |
High-Power Density 2W Laser Diode 798 nm, LASER DIODE M-272, 12 PIN
|
SONY NXP Semiconductors N.V.
|
NX6514EH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
BZY93C9V1R BZY93C75R BZY93C47R |
Diode Zener Single 9.05V 6% 20W 2-Pin DO-4 Diode Zener Single 74.5V 6% 20W 2-Pin DO-4 Diode Zener Single 47V 6% 20W 2-Pin DO-4
|
New Jersey Semiconductor
|